|
|
 |
| Популярные компоненты / Транзисторы / Мощные: |
| Мощные |
| Транзистор |
Проводимость |
Uкэ, В |
Iк, A |
hоэ |
P, Вт |
F |
Описание, тип корпуса |
| BD139 |
NPN |
80 |
1,5 |
40-250 |
12,5 |
190 МГц |
power TO-126 |
| BD140 |
PNP |
80 |
1,5 |
40-250 |
12,5 |
190 МГц |
power TO-126 |
| PHE13005 |
- |
700 |
8 |
8-40 |
75 |
0,16 mkS |
Silicon Diffused Power TO220AB |
| PHE13007 |
- |
700 |
8 |
5-30 |
75 |
0,04 mkS |
Silicon Diffused Power TO220AB |
| BU208A |
NPN |
1500 |
8 |
- |
150 |
0,55 mkS |
Multiepitaxial POWER TO-3 |
| BU4507AX |
- |
1500 |
8(Isat-4) |
- |
45 |
0,45 mkS |
Silicon Diffused Power SOT399 |
| BU4507DF |
- |
1500 |
8(Isat-4) |
diode |
45 |
0,4 mkS |
Silicon Diffused Power SOT199 |
| BU4508AX |
- |
1500 |
8(Isat-5) |
- |
45 |
0,48 mkS |
Silicon Diffused Power SOT399 |
| BU508A |
NPN |
1500 |
8 |
- |
125 |
0,55 mkS |
Multiepitaxial POWER TO218 |
| BU508AF |
- |
1500 |
8(Isat-4,5) |
- |
34 |
0,7 mkS |
Silicon Diffused Power SOT199 |
| BU508AFI |
NPN |
1500 |
8 |
- |
50 |
0,55 mkS |
Multiepitaxial POWER ISOWATT218 |
| BU508AW |
- |
1500 |
8(Isat-4,5) |
- |
125 |
0,7 mkS |
Silicon Diffused Power SOT429 |
| BU508DF |
- |
1500 |
8(Isat-4,5) |
diode |
34 |
0,7 mkS |
Silicon Diffused Power SOT129 |
| BU508DFI |
NPN |
1500 |
8 |
diode |
50 |
0,55 mkS |
Multiepitaxial POWER ISOWATT218> |
| BU508DW |
- |
1500 |
8(Isat-4,5) |
diode |
125 |
0,7 mkS |
Silicon Diffused Power SOT429 |
| BUT11APX |
- |
1000 |
8(Isat-3) |
10-35 |
32 |
0,2 mkS |
Silicon Diffused Power TO220AB |
| BUT12AF |
- |
1000 |
8(Isat-5) |
10-35 |
32 |
0,8 mkS |
Silicon Diffused Power TO220AB |
| ST1803DH |
- |
1500 |
10 |
diode |
32 |
0,6 mkS |
Silicon Diffused Power ISOWATT218 |
|
|
|
|
|
